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APT36GA60B APT36GA60S
600V High Speed PT IGBT
(R)
-2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT36GA60B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT
TO
APT36GA60S
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage
2 1
Ratings
600 65 36 109 30 290 109A @ 600V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 20A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 250 2500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6327 Rev B 12 - 2008
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
0.43 -
Unit
C/W g in*lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 20A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 20A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 20A RG = 104 TJ = +125C 109 16 14 122 77 307 254 14 15 149 113 508 439 34
APT36GA60B
Typ
2880 226 328 102 18 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Min
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6327 Rev B 12 - 2008
Typical Performance Curves
40
V
GE
APT36GA60B_S
280 15V 13V 240 200 12V 160 11V 120 80 40 0 10V 9V 8V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 20A C T = 25C
J
= 15V
IC, COLLECTOR CURRENT (A)
30
TJ= 125C TJ= 25C TJ= 150C
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
TJ= 55C
300 250 200 150 100 50 0
16 14 12 10 8 6 4 2 0
IC, COLLECTOR CURRENT (A)
VCE = 120V VCE = 300V VCE = 480V
TJ= 25C TJ= 125C 0 2 4 6 8 TJ= -55C 10 12 14
0 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
20 30 40 50 60 70 80 GATE CHARGE (nC) FIGURE 4, Gate charge
90 100
5
3
4
IC = 40A IC = 20A
3
IC = 40A IC = 20A
2 IC = 10A 1
2 IC = 10A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80 70
0
0
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 IC, DC COLLECTOR CURRENT (A) 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25
60 50 40 052-6327 Rev B 12 - 2008 30 20 10 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25 50
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
Typical Performance Curves
20 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 200
APT36GA60B_S
18
160
VGE =15V,TJ=125C
16 VGE = 15V
120
VGE =15V,TJ=25C
14
80
12
10
VCE = 400V TJ = 25C, or 125C RG = 10 L = 100H
40
VCE = 400V RG = 10 L = 100H
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 10, L = 100H, VCE = 400V
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125 100 75 50 25 0
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V RG = 10, L = 100H, VCE = 400V
0
40 35 30
tr, RISE TIME (ns)
20 15 10 5 0 0CE, COLLECTOR-TO-EMITTER 30 35 40 5 10 15 20 25 CURRENT (A) I
FIGURE 11, Current Rise Time vs Collector Current
TJ = 25 or 125C,VGE = 15V
1500 Eon2, TURN ON ENERGY LOSS (J) 1250 1000 750 500 250 0
tr, FALL TIME (ns)
25
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R =10
G
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1200 1000 800 600 400 200 0
V = 400V CE V = +15V GE R = 10
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2000 SWITCHING ENERGY LOSSES (J) 1800 1600 1400 1200 1000 800 600 400 200 0 0
Eoff,20A Eon2,10A Eoff,10A Eon2,20A Eoff,40A
V = 400V CE V = +15V GE T = 125C
J
0
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 1600 SWITCHING ENERGY LOSSES (J) 1400 1200 1000 800 600 400 200 0
Eoff,40A
V = 400V CE V = +15V GE R = 10
G
Eon2,40A
Eon2,40A
052-6327 Rev B 12 - 2008
Eon2,20A Eoff,20A Eon2,10A Eoff,10A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100
APT36GA60B_S
1000
10
100
Coes
1
Cres 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.50 ZJC, THERMAL IMPEDANCE (C/W) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10
-4
D = 0.9
0.7
0.5 0.3
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3 10 -2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
TJ (C)
TC (C)
Dissipated Power (Watts)
.0069
.239
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.1853
.2443
052-6327 Rev B 12 - 2008
APT36GA60B_S
10% Gate Voltage td(on) TJ = 125C 90% tr
V CC IC V CE
APT30DQ120
Collector Current 5% Collector Voltage
5%
10%
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
Collector
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
052-6327 Rev B 12 - 2008
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector
Heat Sink (Drain) and Leads are Plated
Emitter
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Emitter Collector
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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